Registration Number
0208U006918,
0107U008292
, R & D reports
Title
Spin injection processes at metal/semiconductor structures
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Head
Gorley Petro Mykolayovych,
Registration Date
24-12-2008
Organization
Yuri Fedkovych Chernivtsi National University
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We optimized magnetron deposition technology for thin films of metal oxides (in particular, ZnO:Mn), namely carrier gas pressure (0.8 Pa), distance between the target measuring 40 mm across and the substrate (3 cm), substrate temperature (473 K), allowing to obtain homogeneous films with desired specific resistivity and good substrate adhesion for the different doping impurity concentrations. 2. Parameter variations for chemical etching and thermal diffusion allowed technology optimization for ZnО:Mn layers with both mirror-smooth and quantum-scale surface structures.3. It was shown that the presence of magnetic impurity results in a new photoluminescence band for ZnO:Mn heterolayers; quantum-scale surface formations cause the pronounced dispersion of incident laser light.
Product Description
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2020-04-02
