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Information × Registration Number 0209U001022, 0106U001623 , R & D reports Title Ihe synthesis of nanostructured boron-nitride films of transition metals and investigation its physics-mechanical properties popup.stage_title Head Goncharov Alexsandr A., Registration Date 05-01-2009 Organization Donbass State Engineering Academy popup.description2 The researches of sputtering conditions and condensation condition influence on a phase composition, structural perfection and properties of films are in the thesis. A film gained by means of through an ion - plasma sputtering of targets TaB2 and VB2 by rf-magnetron system. The mechanism of deposition of target in an environment Ar+N2, which explains the change of kinetics of growth and absence of the boride phases, is presented. The method of receipt of the multilayers boride and nitride structures of transitional metals is offered with the set physical-mechanical properties, in one technological loop, using one target, varying the modes of dispersion and correlation of thickness in layers. This method also allows to protect tapes of boride vanadium from oxidization. The practical guidelines for obtaining nanocrystallinе films of the researched compounds are reduced. Product Description popup.authors popup.nrat_date 2020-04-02 Close