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Information × Registration Number 0209U001973, 0105U001375 , R & D reports Title Research of the protective masks stability from nickel in conditions plasmochemical etchings of semiconductor materials in plasma of the HF-discharge with controlled magnetic fields. popup.stage_title Head Borysenko Anatolij Grygorovych, Registration Date 02-04-2009 Organization Scientific Center "Institute for Nuclear Research" of National Academy of Sciences of Ukraine popup.description2 Researches of the etch resistance of a nickel protective mask, received by a method of electron beam evaporation with additional ionization, are carried out. For researches the model of a plasmachemical reactor for the etching of the semi-conductor materials, was used. This plasmachemical reactor was developed in Institute for Nucleaer Research of National Academy of Sciences of Ukraine. Distinctive characteristic of the given reactor is an opportunity to adjust of the energy of the plasma ions which are interact with a surface of the semi-conductor materials. Plasmachemical etching was carried out in a plasma which contain SF6 with additives up to 10 % oxygen, capacity of the basic HF-generator < 1000 W, pressure of a working mediam in the discharge volume 5x10-2 mm Hg . Shown, that the protective masks from Ni at use of electron beam evaporation with additional ionization can be created which are have the speed of etching almost in 2 times less, than protective Ni film received by a method of а magnetron deposition, in conditions of the plasmachemical etchings Si. Protective films which are received on this technology is stable enough at ions energe up to 200 V. Product Description popup.authors popup.nrat_date 2020-04-02 Close