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Information × Registration Number 0209U001981, 0107U009801 , R & D reports Title Formation mechanisms and quantum size effects in the systems of Ge quantum dots on Si(100) and Si(111). popup.stage_title Head Naumovets A.G., Registration Date 03-04-2009 Organization Institute of physics NASU popup.description2 Epitaxial heterostructures with vertically integrated Ge quantum dots on Si(100) were prepared and investigated. The optimal conditions of epitaxial growth were revealed in order to prepare more perfect Ge quantum dot structures in the view of their possible application for elaboration of new infrared photoreceivers and low-voltage emitters. Investigation of field and photofield emission, as well as lateral photoconductivity in such structures revealed quantum size effects. Systems of self-assembled Si and Ge nanoclusters were prepared on initially amorphous SiOx (х?2) film by molecular-beam epitaxy. Possible formation mechanisms of such structures were proposed.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close