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Information × Registration Number 0209U002069, 0107U007817 , R & D reports Title Diagnostics of destruction of objects micro- and nanoelectronics under external effect popup.stage_title Head Germash Ludmila Pavlovna, Registration Date 19-01-2009 Organization National Technscal University of Ukraine "Kiev Polytechnic Institute". popup.description2 Objects of a research - cross-section of the outputs of an electric current silicon epitaxial-planar p-n-p of transistors and high-frequency universal instruments micro and nanoelectronics by width about 0,1 microns. The objective of operation - diagnostics of destruction of objects micro and nanoelectronics at external effect. Methods of a research - electronic - microscopic and statistical analysis of a topography of defective cross-sections of the outputs. The methods of an electrostatic power microscopy are defined which can be used for execution of operations on detection of defects and microcracks by the probe atomic-power microscope. The microphotos of local defects and microcracks on samples after external effect of temperature fluctuations, pressure and vibration, characteristic of maintenance of instruments containing heterostructures of a various nature are obtained. The main electrophysical characteristics of layers of porous defects of silicon in structures a silicon substrate silicon witha layer of porous defects are defined which can be the semiconductor obtained chemical and electrochemical etching. Diagnostics of destruction of cross-sections silicon epitaxial-planar p-n-p of transistors is conducted. The systems analysis of methods of atomic-power microscopy concerning possibilities of a microresearch of a topography of defective cross-sections of the outputs of an electric current silicon epitaxial-planar p-n-p of transistors and high-frequency universal instruments by width about 0,1 microns is conducted which are under effect of water corrosion. The recommendations for diagnostics of destruction of cross-sections of the outputs of an electric current of objects micro and nanoelectronics are developed at external effect. The forecasting assumption of development of the object of a research - development of new methods of diagnostics of instruments of nanophysics and nanoelectronics, in particular - high-speed methods, stables in conditions of various temperatures, pressure and other external factors. Product Description popup.authors popup.nrat_date 2020-04-02 Close