1 documents found
Registration Number

0209U002129, 0106U006767 , R & D reports

Title

Development of physical principles and technologies of creation IR receiver on basis of heterostructures CdHgTe and diagnostic systems of new generation.

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Head

Sizov F.F., Доктор фізико-математичних наук

Registration Date

20-01-2009

Organization

Institute of Semiconductor Physics of National Academy of Sciences of Ukrain

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Research of influence of ultrasonic treatment and gamma-irradiation on electrophysics descriptions of ik-fotodiodov and charts of read-out of information is conducted. It is set that after UZO of tapes of KRT there is the acoustic stimulated change of the probed parameters of remaining character, namely diminishing of mobility and increase of electronic contribution to conductivity and also converting of type of conductivity of semiconductor of p n. Stand, which in the automatic or semi-automatic mode allows to conduct registration of amplitude of signal of all cells of ROIC, measuring of noises of ROIC, is developed, measuring of non-linearity of transmission description is charge-tension of ROIC, measuring of dynamic range of ROIC, measuring of variation of threshold tensions of ROIC.5635

Product Description

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2020-04-02

R & D report
Development of physical principles and technologies of creation IR receiver on basis of heterostructures CdHgTe and diagnostic systems of new generation.
Head: Sizov F.F.. Development of physical principles and technologies of creation IR receiver on basis of heterostructures CdHgTe and diagnostic systems of new generation.. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0209U002129
1 documents found

Updated: 2025-06-02


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