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Information × Registration Number 0209U002144, 0106U006877 , R & D reports Title Development of the principle of nanocrystalline materials creation and study the spin phenomena in semiconductor nanostructures for the new generation of optonanoelectronic and spintronic devices popup.stage_title Head Valakh Mykhailo Yakovych, Registration Date 21-01-2009 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 It is established that the vertical correlation of the self-induced GeSi nanoislands in multilayer structures leads to decrease of the strain inside the nanoislands. This is related to the fact that the islands in the upper layers of the superlattice are formed on the regions of silicon spacer with the lattice constant larger than in the bulk silicon. It is established that for superlattices with GeSi quantum dots (QD), formed in the range of temperatures 300-500 C, the minimum energy of the quanta, at which the photocurrent is observed, is smaller than the QD bandgap. The latter effect is explained by the indirect transitions of holes from the valence band of GeSi QDs to the valence band of the Si matrix. For the structures with SiO2-embedded Ge QDs, formed by implantation with the subsequent annealing, the nature of the emission bands is established for different stages of the annealing. By using the electron spin resonance spectroscopy the paramagnetic centers in these structures have been identified.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close