Search academic texts

Information × Registration Number 0209U002149, 0107U007150 , R & D reports Title Investigation of the principles of the generation millimeters and submillimeters radiation in the nanoscale heterostructure n+-i-n+ and n+-n-n+ diodes based on the modern wide-bandgap materials popup.stage_title Head Korotyeyev Vadym Vyacheslavovich, Registration Date 21-01-2009 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The theory of high-field and high-frequency electron transport in n+-i-n+ and n+-n-n+ ballistic diodes has been developed. In frame of present theory the calculation of dc current-voltage characteristics and ac impedance has been carried out in dependence of temperature, base length and contact properties. The appearance of transit-time instability and amplitudes of negative dynamic resistance was analyzed in dependence of the injection and high-frequency properties of contacts in terahertz frequency range. The model of terahertz generator which based on ballistic diode has been proposed. The excitation criterion of such generator has been calculated. Product Description popup.authors popup.nrat_date 2020-04-02 Close