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Information × Registration Number 0209U002167, 0108U006481 , R & D reports Title Development of physic-technological fundamentals for mm-wave diode producing and testing based on III-nitride epitaxial heterostructure. popup.stage_title Head Boltovets Мykola, Registration Date 21-01-2009 Organization State Scientific-Reseach Institute "Orion" popup.description2 The mathematical simulation of microwave characteristics of equivalent circuits of diodes is conducted in the electromagnetic system with the purpose of determination of requirements to the construction elements of microwave diodes. The model standards of n+-n-n+- type mesas on the basis of GаN were manufacturing on a sapphire with the base n-layer thickness of 1.5 µm. The flow sheets of micro assembling operations are realized with the use of flux less high temperature welding operations. Experimental researches of HF-characteristics of packaged n+-n-n+-diodes are performed in the pulse-mode in the current range up to 5 A and voltages up to 50 V at a 30 ns pulse width. Product Description popup.authors popup.nrat_date 2020-04-02 Close