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Information × Registration Number 0209U002470, 0106U000657 , R & D reports Title New principles, methods and means of fabrication, investigation and characterization of semiconductor materials and structures, development of the element base for perspective semiconductor electronic technology, including those developed on the base of new physical phenomena popup.stage_title Head V.Machulin, Registration Date 12-02-2009 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 ABSTRACT Report on Research&Development Work: 1471 p., 3 Chapters, 1 Supplement, 354 figures, 25 Tables, 559 references. Object of this R&D work: new principles, methods and ways to produce, study and characterization of semiconductor materials and structures; elemental base of advanced semiconductor electronic technique, including that based on new physical phenomena. The purpose and results of the work: developed are new principles, methods and ways to produce and characterize semiconductor materials and structures; created is the elemental base of promising semiconductor electronic technique, including that based on new physical phenomena. This work corresponds to the whole complex of investigations and developments that covered, in particular: - development of the base for tera-Hz electronics; - development of functional devices for opto- and microelectronics based on new layered and composite materials as well as methods to control and characterize their parameters; - development of methods formicrowave spectroscopy and optical diagnostics of changes in characteristics of semiconductor and dielectric materials and structures under the influence of active factors; - technological investigations aimed at preparation and modification of semiconductor structures based on A2B6 compounds, polymers and elemental semiconductors to create photoconverters; - development of optimized technologies to produce nanocomposites and periodic nano-sized structures by using the principles of controlled self-organization as well as creation of prototypes for device systems based on them; - development of new methods for X-ray and scanning-probe diagnostics of semiconductor nanostructures; - development of passive and active elements as well as technologies of infra-red technique; - development of new multifunctional materials for sensor electronics based on semiconductor heterostructures Ge-GaAs. The results of this R&D work are of principal importance to create modern technologies for production of semiconductor materials and structures as well as elemental base necessary to micro-, opto- and photoelectronic technique. OPTOELECTRONICS, PHOTOELECTRONICS, SEMICONDUCTOR NANO-SIZED STRUCTURES, ACOUSTIC EMISSION, IR-PHOTODETECTORS, SEMICONDUCTOR PHOTONIC CRYSTALS, NANOCOATINGS, NANOCOMPOSITES, GETTERING, PHOTOCONVERTERS, NANOSTRUCTURES, HETEROSTRUCTURES, SENSORS, OPTOELECTRONIC TRANSDUCERS. Terms for obtaining this report: in accordance with Agreement, 03171 Kyiv, 180 vul. Antonovich, UkrINTEI. Product Description popup.authors popup.nrat_date 2020-04-02 Close