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Information × Registration Number 0209U005265, 0105U007636 , R & D reports Title Formation of new properties of semiconductor materials and structures: clustering and intercalation in layers and tapes popup.stage_title Head Il'chuk Grygoriy Arhipovich, Registration Date 28-01-2009 Organization Lviv Polytechnic National University popup.description2 Complex researches are conducted in new directions in semiconductor materials science, new materials (tapes, layers, single-crystals) are created, device structures are realized on their basis and the physical phenomena are investigational in them. In the direction of development of elements the technologists of creation of sun cells on pellicle basis are developed physical and chemical bases laboratory technologists of the simultaneous electrochemical besieging of Cd and Te and tapes of Cd+Te (d=0,1-4 mkm) of high degree of uniformity are got, which at annealing of restructure with formation of cube modification of CdTe. The method of the chemical surface deposition (CSD) is developed and the thin-films of CdSchem are got (d=30-100nm). CSD is given away model heterostructure of CdSchem/CdTe. The method of chemical vapour transport with the use of carrying agent NH4I is first rear single crystals stratified GaSe and their complex research is conducted. New material is created are polymeric layers fromby the built-in clusters (d=23-30 nm) of semiconductor of CDS and found out education in this polymer of edge of fundamental absorption of 2,43 - 2,52 eV. In an air environment created heat treatment of crystals n-InSe on his surface of oxide (Ox) tape, got and investigational in a natural and linear-polarized radiation photosensitive heterojunction of n-Ox/n-InSe. Product Description popup.authors popup.nrat_date 2020-04-02 Close