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Information × Registration Number 0209U005551, 0107U000738 , R & D reports Title Influence of defects of radiation origin on parameters of photo active centers in chalcogenide semiconductors popup.stage_title Head Davidyuk G, Registration Date 20-02-2009 Organization Lesya Ukrainka Volyn National University popup.description2 Тhe recommendations relating the parameters of initial crystals of cadmium sulfide, most resistant to the electronic, neutron radiation and x-ray irradiation are developed The mechanisms of sub-threshold formation of defects in CdS and CdS:Cu single-crystals after irradiation by laser and x-ray quanta are estimated. The physical model of quasi-chemical reactions between primary radiation defects and doping Cu atoms is suggested. Product Description popup.authors popup.nrat_date 2020-04-02 Close