Search academic texts

Information × Registration Number 0209U006317, 0106U001566 , R & D reports Title Resonant - tunnel and avalance phenomena in milimeter wave transfer electrons A3B5 ( GaAs, GaN, InN, AlN) devises popup.stage_title Head Prohorov E., Registration Date 04-02-2009 Organization Kharkov National University named after V.N.Karazin popup.description2 The work: 127 page,68 fig.,8 table., 86 sources. Object of research nanoscale structures on the basis of nitrides (GaN, InN, AlN), intervaley transfer electron structures (TES) and impact ionization, wideband GaAs oscillators and noise GaAs-diodes and sm and mm - ranges oscillators. The purpose of work is investigating of resonant tunneling in GaN, InN and AlN resonance-tunnel diodes (RTD), resonance-tunnel and avalanche effects in A3B5 semiconductors (GaAs, GaN, InN, AlN) for creation of new semiconductor devices in which the mentioned above effects lead to increasing of oscillation efficiency, expansion of frequency opportunities of RTD oscillators, TES and increasing of noise level of noise oscillators in comparison with known active elements (Gunn diode and IMPATT diode ) to be operated in mm -wave range. The problem has been studied by computer - aided modelling physical process in semiconductor structures with electron transfer and impact ionization, nitrides nanoscale structures and an experimental research of GaAs noise oscillators on basis diode with a narrow semi insulated layer in region near cathodes. The investigations are caused by necessity of creation of new semi-conductor devices for short-wave part of mm and sub mm-wave ranges. Novelty of work is - creation of new solid-state active elements for microwave and noise generation in mm - wave and sub mm-wave ranges on the basis of gallium arsenide and nitrides. Results of work and the recommendation will be using for manufacture of new solid-state devices. Base assumptions concerning development of object of research are search of new solid-state active elements on basis transfer electron, resonance - tunnel and avalanche effects generation and amplification of for mm - wave and sub mm-wav ranges electromagnetic oscillations. The basic fundamental results: 1. The resonance -tunnel cathode improves power and frequency characteristics of transfer electron GaAs diodes. 2. The oscillations efficiency of AlN/AlxGa1-x N, GaN/InxGa1-x N resonance-tunnel diodes are ОДП 10...30 % on frequencies up to 1 ТHz. 3. The nitride transfer electron diode current - voltage characteristics width is determined. 4. Influence of impact ionization and the voltage waveform in transfer electron diodes on harmonics generation and of frequency multiplication have been investigated. Impact ionization narrows a working voltage range on the diode. The complex voltage waveform on the diode raises efficiency on 15...20 % on the basic harmonic. Impact ionization lead to increasing of coefficient frequency transform up to 35...40 % in oscillation harmonics mode. 5. The opportunity of creation of the cathode static domain with intensity of an electric field, sufficient for impact ionization, and creation noise diodes for mm wave - range with spectral noise power density of 104 … 105 kT0 is shown NANOSCALE STRUCTURE, RESONANCE-TUNNELING DIODES, GUNN DIDES, FREQUENCY RANGE, OSCILLLATOR, IMPACT IONIZATION, NOISE DIODE. Product Description popup.authors popup.nrat_date 2020-04-02 Close