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Information × Registration Number 0209U006913, 0104U010541 , R & D reports Title Development of the molecular-beam epitaxy technique and technology finalizing of nanosize alloys and SiGe nanostructures. popup.stage_title Head Valakh Mykhaylo Yakovych, Доктор фізико-математичних наук Registration Date 16-07-2009 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Recommendations for the formation SiGe nanostructures with high density of islands 10^9-10^10 см^-2 and fine crystalline quality were developed. The consignment (10 ps) of SiGe buffer layers on SOI-structures were produced and studied their physical properties. Product Description popup.authors Лисенко Володимир Сергійович Юхимчук Володимир Олександрович popup.nrat_date 2020-04-02 Close
R & D report
Development of the molecular-beam epitaxy technique and technology finalizing of nanosize alloys and SiGe nanostructures.
Head: Valakh Mykhaylo Yakovych. Development of the molecular-beam epitaxy technique and technology finalizing of nanosize alloys and SiGe nanostructures.. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0209U006913
1 documents found

Updated: 2026-03-26


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