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Information × Registration Number 0209U008214, 0107U005658 , R & D reports Title Research and development of the ways for creating microwave integrated circuits of millimeter and teraherz range on base of micro- and nanocrystal layers of synthetic diamond of 2-100 micrometer thickness. popup.stage_title Head Boltovets Мykola Sulovuch, Registration Date 30-01-2009 Organization State Scientific-Reseach Institute "Orion" popup.description2 Scientific and technical decisions and technological processes, necessary for creation of microwave hybrid circuits of millimetric and teragherz wavelength on basis of micro- and nanocrystal layers of synthetic diamond with the thickness of 20-100 мкм are developed, with the use of Si multiplying IMPATT-diodes. The experimental sample of HF integrated circuits on diamond substrates is made, and research of experimental sample of the integrated circuits is conducted. Researches rotined that in the frequency range of 90-100 GHz an insertion loss in transmission lines of microwave integrated circuits are not exceeded by 2 dB/cm, substrate conductivity of a synthetic diamond at +25°С is more than 3o1013 Omocm. The sample output power is 75 mkW at frequency 94 GHz.5635 Product Description popup.authors popup.nrat_date 2020-04-02 Close