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Information × Registration Number 0209U010190, 0108U009041 , R & D reports Title . Investigations of physical properties А21-ХМХВ6 and phenomena transport in structures on their base popup.stage_title Head Paranchych Stepan Yurievych, Registration Date 24-09-2009 Organization Yuri Fedkovych Chernivtsi National University popup.description2 . Physical properties of СrxHg1-x-Sе (х=0,03; 0,05) have been studied and comparison of ferromagnetic inclusions along the crystals has been carried out. Application of solid-state recrystallization for the СrxHg1-x-Sе growth proved occurrence of ferromagnetic square-shaped clusters of HgCr2Se4 aligned along the crystalline ingot. Moving towards the end of the ingot, the CrSe clusters of irregular shape appear. Magnetic ordering was shown to present in the crystal. In ternary and quaternary solid solutions of CrxHg1-xSe and CdxHg1-x-yCrySe it is possible to obtain inclusions of different nature with relation to basic matrix depending on composition, whereas in course of decomposition of the CdxHg1-x-yCryS solid solution the separation of light elements in the composition of inclusions of other phase occurs. The greatest promising portions of the crystal are at the middle of the crystal, which contain parallel systems of inclusions in the shape of "stripes" with homogeneous content of magnetic phase Cr=52.7%. These crystalline plates may be used in spintronics elements. For the first time single crystals of CrxHg1-xTe (х=0,006; 0,03) have been grown, and experimental investigations of their electrical characteristics, magnetic susceptibility and EPR-spectra in 77-400 K temperature range and in magnetic fields of 0-12 kE have been carried out. Chromium was shown to be in both Cr2+ and Cr3+ states, depending on sample position in the ingot. Temperature dependence of magnetic susceptibility indicates complex magnetic interaction in the CrxHg1-xTe crystals. Breaks in the dependences of -1(Т) point out the presence of ferro- and antiferromagnetic interaction. Thermal annealing of the CdxHg1-х-уСrySe samples has been performed. It was shown, that long-term (400 700 hours) thermal annealing of the CdxHg1-х-уСrySe samples in Hg, Se vapors and vacuum brings about modification of physical properties and significantly improves optical quality. For the first time structures of CdxHg1-x-yCrySe /MnxHg1-xTe, Cd1-xMnxTe/ Hg3In2Te6 have been obtained by laser and high-frequency ion-plasma deposition. Electron and microscopic investigations of the borders of the grown structures and their (I-V) characteristics showed that: а) structures of CdxHg1-x-yCrySe/MnxHg1-xTe possess rectifying properties, while in the direct branch of the (I-V) a section with negative differential conductivity is observed, which can be used in super high frequency device manufacture; b) structures of Cd1-xMnxTe/Hg3In2Te6 exhibit rectifying properties and are sensitive to magnetic field. Product Description popup.authors Андрійчук Мирослав Дмитрович Білинський-Слотило Володимир Романович Макогоненко Володимир Микитович Паранчич Лідія Дмитрівна Паранчич Степан Юрійович Романюк Оксана Степанівна Савчук Андрій Йосипович popup.nrat_date 2020-04-02 Close