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Information × Registration Number 0209U010324, 0107U007757 , R & D reports Title Development of physical-technological base for production of power high-speed high-voltage 4НSiC ріn diodes popup.stage_title Head Boltovets Mykola, Registration Date 16-11-2009 Organization State Scientific-Reseach Institute "Orion" popup.description2 Scientific and design-technological decisions have been developed in order to create base "know-how" of power high-speed high-voltage microwave 4НSiC pin diodes intended for use in frequency range up to 40 GHz. The construction of 4НSiC pin diode in the form of р+-і-n+ mesa structure, which is expected to be used in semi-conductor instrument making industry, in particular in hybrid IC, is developed. Design-technological simulation of packageless 4НSiC ріn diodes with thickness of high-resistance area of 6?8 micron is fulfilled. The outline design and routing technological documentation on manufacturing packageless 4НSiC pin diodes with breakdown voltage up to 1000 V is developed. The experimental samples of high-speed high-voltage 4НSiC pin diodes have been manufactured the characteristics of which are investigated. Comprehensive study of 4НSiC pin diodes parameters in the interval of temperatures to 500°С is made. As a result of research it is defined 2 standard ratings of diodes by value of blocking voltage, capacity and switching time. Product Description popup.authors В.І. Миколаєнко В.А. Кривуца В.В. Басанець К.О. Личман Л.В. Журавель М.С. Болтовець Н.А. Казюка Н.Я. Урицька О.С. Слєпова Т.В. Коростинська Т.М. Лєдєньова popup.nrat_date 2020-04-02 Close