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Information × Registration Number 0209U010695, 0108U003868 , R & D reports Title Development of new complex approach to nanostructural characterization of semiconducting glassy materials for optoelectronics popup.stage_title Head Kavetskyy Taras Stepanovych, Кандидат фізико-математичних наук Registration Date 23-12-2009 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 Historical review on the problem of nanostructural characterization of semiconducting glassy materials is carried out. Evolution of atomic and void nanoscales in semiconducting glassy materials is illustrated. The methodology of nanostructural characterization of semiconducting glassy materials by diffraction methods (conventional x-ray diffraction in the region of the first sharp diffraction peak, high-energy synchrotron x-ray diffraction and extended x-ray absorpition fine structure spectroscopy) is developed. Radiation treatment of the samples of glassy semiconductors by gamma-quanta Co60 in the condition of the stationary radiation field with absorbed dose higher than 1 MGy is performed. Investigation of semiconducting glassy materials of optoelectronics by diffraction methods following the methodology developed is carried out. Evolution of nanovoids in the semiconducting glassy materials is illustrated on the basis of the parameters of positron annihilation (or positron annihilation lifetime spectroscopy). The methodology of nanostructural characterization of semiconducting glassy materials by positron annihilation method is developed. Investigation of semiconducting glassy materials by positron annihilation method following the methodology developed is carried out. It is established that the methodology of positron annihilation developed enable us to study nanovoids topology in the glass matrix and to estimate their changes induced by radiation treatment of the material. It is found a good correlation between the volume of nanovoids calculated form the data of positron lifetimes (component 2) and parameters of the first sharp diffraction peak (position Q1) for the glasses studied. The methodology of nanostructural characterization of semiconducting glassy materials by Raman spectroscopy is developed. Investigation of semiconducting glassy materials by Raman spectroscopy method following the methodology developed is carried out. The parameters of the so called boson peak (low-frequency vibrational excitations in the Raman spectra) for the investigated materials are established and their composition trends are analyzed. It is found that the methodology of Raman spectroscopy developed enable us to study the features of the medium range order in the glass matrix and to estimate the sensitivity of the glassy matrix to impact of the external influences, in particular, high-energy ionizing gamma-irradiation. On the basis of the experimental data obtained from diffraction methods, positron annihilation method and Raman spectroscopy, the methodology of nanostructural characterization of semiconducting glassy materials of optoelectronics by complex structural techniques is developed. Product Description popup.authors Вільків Оксана Володимирівна Зайцев Олександр Вадимович Кавецький Орест Степанович Кавецький Тарас Степанович Паньків Людмила Іванівна Саприкін Юрій Олександрович Федиців Галина Володимирівна Цмоць Володимир Михайлович popup.nrat_date 2020-04-02 Close