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Information × Registration Number 0209U010740, 0108U001097 , R & D reports Title The technological aspects of manufacturing of artificial substrates for epitaxy of device structures based on GaAs popup.stage_title Head Shutov Stanilav, Registration Date 23-12-2009 Organization Kherson national technical university popup.description2 The principles of experimental methods for high crystalline quality heterostructures formation with low surface density of threading dislocations were worked out. Such structures can be used as "artificial" substrates for the next epitaxial growth of device structures for optoelectronics based on А3В5 solid solutions. The mathematical model of liquid phase electroepitaxy was worked out for the test heterosystems GaAsP-GаАs and GаАs-Si. The technological equipment was worked out and experimental examination of simulation results was carried out. The analysis of influence of isovalent doping on activation of misfit dislocations motion and dislocation redistribution in an epitaxial layer was carried out. Some results of investigations were defined by Patents of Ukraine. Product Description popup.authors Баганов Євген Олександрович Бобошко Юрій Миколайович Войцеховський Сергій Олександрович Хлопенова Ірина Анатоліївна Шутов Станіслав Вікторович popup.nrat_date 2020-04-02 Close