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Information × Registration Number 0210U000318, 0108U003666 , R & D reports Title Development of high-resolution chalcogenide photoresists and their application in photoelectronics popup.stage_title Head Indutnyi Ivan, Доктор фізико-математичних наук Registration Date 03-02-2010 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Theoretically and experimentally was investigated and optimized technology of liquid and solid immersion photolithography on the basis of chalcogenide photoresists including the processes of vacuum deposition, exposition and treatment of photoresist. Using liquid and solid immersions the one-dimensional and binary interference structures with spatial frequency up to 8000 мм-1 were recorded, and their optical and morphological characteristics were investigated. It is established that non-expensive and highly productive interference lithography with the use of chalcogenide photoresists allows to form submicrometer semiconductor relief structures on substrates of considerable sizes and variable use. Recommendations are developed about application of obtained results Product Description popup.authors Минько Віктор Іванович Романенко Петро Федорович Шепелявий Петро Євгенович popup.nrat_date 2020-04-02 Close