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Information × Registration Number 0210U000861, 0108U002363 , R & D reports Title Development, theoretical and experiment investigation of new high-efficient luminescent Si- and Ge-based nanostructures popup.stage_title Head Korbutyak Dmytro, Доктор фізико-математичних наук Registration Date 06-04-2010 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 Using pulsed laser deposition method films with silicon and germanium nanocrystals (NC ) in SiO - , GeO - and AL O -matrices have been obtained. It has been found that size of Si (Ge) NCs can be changed from 1 to 10 nm by selection of the deposition mode, the target doze (2-20 J/cm ), working gas pressure (6-200 Pa), by chanding the relative position of the substrate and the target. The main features of photoluminesnce in such structures have been determined. A model of carrier transport in structures with SiO - and GeO - oxide layers containing Si and Ge NC have been developed. Product Description popup.authors Єрмаков В.М. Іваськевич Л.М. Бєгун Є.В. Демчина Л.А. Каганович Е.Б. Калитчук С.М. Корбутяк Д.В. Крюченко Ю.В. Купчак І.М. Манойлов Е.Г. Саченко А.В. popup.nrat_date 2020-04-02 Close
R & D report
Development, theoretical and experiment investigation of new high-efficient luminescent Si- and Ge-based nanostructures
Head: Korbutyak Dmytro. Development, theoretical and experiment investigation of new high-efficient luminescent Si- and Ge-based nanostructures. (popup.stage: ). Institute of Semiconductor Physics of NAS of Ukraine. № 0210U000861
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Updated: 2026-03-26


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