Registration Number
0210U000861,
0108U002363
, R & D reports
Title
Development, theoretical and experiment investigation of new high-efficient luminescent Si- and Ge-based nanostructures
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Head
Korbutyak Dmytro, Доктор фізико-математичних наук
Registration Date
06-04-2010
Organization
Institute of Semiconductor Physics of NAS of Ukraine
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Using pulsed laser deposition method films with silicon and germanium nanocrystals (NC ) in SiO - , GeO - and AL O -matrices have been obtained. It has been found that size of Si (Ge) NCs can be changed from 1 to 10 nm by selection of the deposition mode, the target doze (2-20 J/cm ), working gas pressure (6-200 Pa), by chanding the relative position of the substrate and the target. The main features of photoluminesnce in such structures have been determined. A model of carrier transport in structures with SiO - and GeO - oxide layers containing Si and Ge NC have been developed.
Product Description
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Єрмаков В.М.
Іваськевич Л.М.
Бєгун Є.В.
Демчина Л.А.
Каганович Е.Б.
Калитчук С.М.
Корбутяк Д.В.
Крюченко Ю.В.
Купчак І.М.
Манойлов Е.Г.
Саченко А.В.
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2020-04-02
