Search academic texts

Information × Registration Number 0210U001265, 0107U007277 , R & D reports Title Forming and investigation semiconductor nanostructures for electronic and devices with extended capabilities popup.stage_title Head Belyaev Alexander, Доктор фізико-математичних наук Registration Date 01-02-2010 Organization Institute of Semiconductor Physics of NAS of Ukraine popup.description2 Technologies for growth of nanostructures possessing expanded functionality for manufacturing novel electronic and optoelectronic devices have been elaborated, namely: growth of silicon enriched SiOx films by ion-plasma evaporation of silicon in oxygen atmosphere; synthesis of structures containing Si nanoclusters in SiOx matrix by using advanced approaches that include implantation of dopants with catalytic activity (Al, Ti, C) simultaneously with ultrasonic treatment; growth of porous silicon layers on substrates with a variety conductivity by electro-chemical etching in HF:C2H5OH solution; growth of porous silicon for further usage as matrix for manufacturing SiO2:C structures; advanced technology for growth porous SiC ceramics; growth of multicomponent composites by reciprocal evaporation of components in vacuum. Fundamental investigations of electronic and optic properties of the structures obtained by above mentioned technologies have been carried out. Product Description popup.authors Євтух А.А. Індутний І.З. Горбань А.П. Дмитрук М.Л. Каганович Е.Б. Кисельов В.С. Конакова Р.В. Кочелап В.А. Кругленко І.В. Лисенко В.С. Литовченко В.Г. Романюк Б.М. Саченко А.В. popup.nrat_date 2020-04-02 Close