Search academic texts

Information × Registration Number 0210U001415, 0108U009683 , R & D reports Title Development of production technology of SiC microwave planar Shottki diodes popup.stage_title Head Boltovets Mykola Sulovuch, Registration Date 11-02-2010 Organization State Scientific-Reseach Institute "Orion" popup.description2 As a result of implementation of work scientific and design-engineering decisions are developed for creation of carbide-silicic microwave co-planar diodes with the barrier of Schottky as co-planar structures with hard contacts. The construction of co-planar diodes with the barrier of Schottky is counted on possibility of the use in a semiconductor instrument-making, in particular for the hybrid integrated circuits. Application of original domestic technologies will allow to create the new class of domestic hi-rel competitive element base for electronics and will be instrumental in the increase of export potential of Ukraine in area of high-tech. Product Description popup.authors Басанець В.В. Болтовець М.С. К.О. Личман Кривуца В.А. Л.К. Птушкін Миколаєнко В.І. Н.А. Казюка Н.С.Урицька О.С. Слєпова Т.І. Голинна Т.В. Коростинська Т.М. Леденьова popup.nrat_date 2020-04-02 Close