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Information × Registration Number 0210U001454, 0107U000693 , R & D reports Title The investigation of physical effects in semiconductor compouns under influence of sources of short-wave radiation of ultraviolet range and detection popup.stage_title Head Katrich V., Beletskij N, Registration Date 17-02-2010 Organization Kharkov National University named after V.N. Karazin popup.description2 95 стр.,44 fig., 5 tables, 45 literary sources. A research object is semiconductor connections of type of A2B6, physical phenomena in them at an irradiation an ultraviolet and devices for detection of radiation. A purpose of work is an exposure of perspective semiconductor connections of type of ZnSe, CdZnTe and other for detection of radiation from IR to the Ultraviolet range, development and creation of фотодетекторов on their basis, study of power and spectral descriptions. A research method is theoretical, numeral calculations of descriptions of connections of A2B6 (ZnSe, CdTe, CdZnTe) and their conduct at действии ultraviolet range - radiations. Experimental researches of power and spectral descriptions of fototransformater (diodes of Schottky) on the basis of connections of A2B6 (ZnSe, CdTe) with different metallic contacts. Basic results and their novelty: -for creation ultraviole detectors on the range of 0.24-0.38 нм perspective are connections of semiconductors of A2B6 (ZnSe, CdZnTe, and also SIC), which in a most measure provide detection of radiation ultraviolet range. The basic criterion of choice of semiconductor is a bandgap; -the theoretical calculations of coefficient of collecting of generation transmitters of charge show that for the effective collecting of transmitters it is necessary to utillize materials with large asorptances and diffusion, large sometimes lives of transmitters of charge; -technology of receipt of diodes Schottky is exhaust with contacts from Pt, Pd, Au, Ni, the experimental standards of fotodetector are got on ZnSe, voltamperе descriptions of experimental standards are measured without an irradiation and at by an irradiation ultraviolet; the high spectral sensitiveness of contacts is rotined from Pt as compared to contacts from Ni; -experiment researches of additional barriers in geterostructure type of p ZnSe - n CdSe allow to talk about possibility of transformation of frequency spectrum of registration of radiation in other by the selection of electrophysics parameters of material which the signal of detector hatches through; Approbation of job performances: on materials of fundamental researches of NIR 7 reasons are published in scientific magazines and 5 lectures are done on international conferences. To recommendation on the use of job performances. Can be drawn on the got results and recommendations at development of new fototransformation of different frequency range, including ultraviolet, Technology of etch and preparation of semiconductor plates for spraying of metallic contacts is original and allows to create fotodiodes on different spectral ranges. Keywords: SOURCES OF SHORT-WAVE ULTRAVIOLET; SEMICONDUCTOR DEVICES OF DETECTION; MECHANISM OF FLOWING OF CURRENT; METALLIC CONTACT; DIODE OF SCHOTTKY; GETEROSTRACTURE AND SEMICONDUCTORS OF A2B6 . Terms of receipt of report by agreement. 61077, Kharkov, area of Freedom 4. Kharkov national university of Product Description popup.authors Антоненко Є.В. Бабич Є. Бердник С. Босий В. Дахов В. Лебедева Г.Ю. Павленко Д. Полянський М. Хоружна А. Шкорбатов Ю.Г. popup.nrat_date 2020-04-02 Close