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Information × Registration Number 0210U001695, 0109U006266 , R & D reports Title The development of the production technologies of the hetero-epitaxial quantum-measure light-emitting-diode structures on InGaN/GaN/Al2O3 basis by the method of the gas phase epitaxy from the metal-organic compositions with the power efficiency more then 60 Lm/Wt. popup.stage_title Head Krukovskii Semen Ivanovich, Registration Date 19-03-2010 Organization The closed Joint-stock Company "Research-and-production concern "Science" popup.description2 Application of methods of decline of defects closeness is in the structures of InGaN/GaN during epitaxial growth, that are based on the forming of transitional layers of InGaN, AlGaN, and also stunts of Growth after besieging of quantum points of InGaN in an active area, allows more than on an order to reduce the concentration of centers of irradiation recombination. The application of methods of forming of quantum points of the skims of InGaN based on phase disintegration during epitaxial growth allowed to create the arrays of quantum points with the sizes of 3-5 нм and closeness about 1012 sm-2. The application of the developed methods at growth of active area of light-emitting-diode structures allowed to promote quantum efficiency of radiation in 20 times at the workings values of closeness of current in a range 10-50 A/sm2. By the stimulated phase disintegration of InGaN it is possible to manage the concentration of In in quantum points, and, consequently, by localization of transmitters in quantum points and to vary the mean value of energy of activating of transmitters from the ground-state of quantum points in the area of continuous spectrum in the range of values of 0.1 - 0.8 еВ. Technology of increase of high-efficiency light-emitting-diode hetaerastructures of InGaN/GaN/Al2O3 is developed with the power efficiency more than 60 lm/Wt. Product Description popup.authors Авдєєва О.В. Айвазян В.Г. Бойко М.П. Ваків О.В. Горб В.М. Гуренко В.О. Ковальчук О.Ф. Круковський С.І. Мірошніков А.М. Новіков Є.І. Парфенюк П.І. Позен М.Л. Сухов М.Є. Ющенко Б.І. popup.nrat_date 2020-04-02 Close