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Information × Registration Number 0210U003540, 0109U002081 , R & D reports Title Effect of low dose radiation in semiconducting materials and stability of silicon temperature sensors parameters popup.stage_title Head Pavlyk Bogdan, Registration Date 09-02-2010 Organization Ivan Franko National University of Lviv popup.description2 The technology of the Bi-Si(p)-Al surface-barrier structures formation with the respective parameters is worked out. It has been shown that the effect of small radiation doses (D <260 Gy) leads to the trap centers generation, as well as to the partial compensation of the spatial charge region. It was established that the density of surface levels, which are the centers of recombination at the interface Bi-Si under the effect of the investigated doses, does not change. It is experimentally established that irradiation Si(p) crystal by X-rays (D <390 Gy) is accompanied by rearrangement of structural defects and, as a result, the decreasing of crystals hardness is observed. It was shown that at the initial stage of silicon thermosensors irradiation (D <130 Gy) the stabilization of their characteristics is observed. A physical model of the interaction of structural and radiation defects in the barrier structures based on Si is offered. Product Description popup.authors Грипа Андрій Сергійович Дідик Роман Іванович Лис Роман Мирославович Павлик Богдан Васильович Слободзян Дмитро Петрович Шикоряк Йосип Андрійович popup.nrat_date 2020-04-02 Close