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Information × Registration Number 0210U003556, 0108U006469 , R & D reports Title Photoelectric and diffusion processes in CdHgTe graded-band-gap layers popup.stage_title Head Stakhira Josyp Mykhailovych, Registration Date 09-02-2010 Organization Ivan Franko National University of Lviv popup.description2 Object of research : graded-band-gap epitaxial layers of cadmium-mercury-tellurium, photodiode and photoconductive PSE on their basis, photoelectric and diffusion processes in these structures. Method of research: mathematical modeling of photoelectric and diffusion processes in graded-band-gap semiconductors, investigation of diffusion features in CdHgTe at doping with elements of group V, modification of the properties of epitaxial layers by using ionic etching of different types and fabrication of PSE on the basis of the developed techniques. As a result of execution of the Scientific-Research Project it has been developed and optimized the technology of doping and modification of the properties of CdHgTe graded-band-gap epitaxial layers and diffusion profiles of the obtained graded-band-gap structures have been investigated. Peculiarities of spectral dependences of the photovoltaic effect and photoconductivity in CdHgTe graded-band-gap epitaxial layers have been studied theoretically. A possibility of using the obtained results for determining the band-gap gradient and recombination parameters of the material is proved. Formation of the optimum CVC of the photodiode structures with band-gap inhomogeneity is mainly characterized by decreasing reverse currents and by the influence on the mechanisms of their origin. Introducing the wide-gap layer in the base region of the heterostructure substantially reduces of the reverse currents of PSE and can produce the conditions for manifestation of the negative differential resistance. Presence of internal built-in field in these structures gives rise to increasing the differential resistance of p-n junctions, rising the quantum efficiency of the photoconversion and widening the region of spectral sensitivity. It has been analyzed the influence of spatial inhomogeneity of the intraband photoconductivity with taking into effect the photon drag effect and possible ways for improvement of the sensitivity of the photoconductive PSE. Using the methods of ionic etching it has been investigated the processes of modification of properties of CdHgTe epitaxial layers with the aim of realization of the forecasted effects in PSE and laboratory samples of multi-element photodiode and photoconductive IR detectors have been fabricated. Product Description popup.authors Галій Павло Васильович Зоренко Тетяна Євгенівна Лозинська Марія Іванівна Писаревський Володимир Костянтинович Сімків Богдан Олексійович Соколовський Богдан Степанович Стахіра Роман Йосипович Сторчун Ольга Петрівна Фіцич Олена Іванівна Шевченко Ганна Віталіївна popup.nrat_date 2020-04-02 Close