Search academic texts

Information × Registration Number 0210U004454, 0106U000878 , R & D reports Title Development of new approaches for a creation of perspective nanostructured materials and multifunctional systems based on semiconductor and organic solutions popup.stage_title Head Venger Evgen Fedorovich, Registration Date 27-12-2010 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The aim of the project was development of new approaches for a creation of perspective nanostructured materials and multifunctional systems based on semiconductor and organic solutions. The objects of the research were semiconductor materials А4 (n- and p-Si, Ge and nc-SiC solution, 4Н SiC, 6H SiC, Ge films), А3В5 (GaAs, AlN/GaN, AlGaN/GaN, AlGaN/GaN/Al2O3), A2B5 (c-ZnAs2, a-CdAs2), A2B6 (CdZnTe, CdS, CdSe ZnS, ZnSe, CdHgTe), simple (p-Cu1.8S/n-CdSe) and multilayered (p-Cu1,8S/n--ZnS/n-A2B6) heterostructures, heterosystems NbN-GaS, ZnSe-GaAs, Ge-GaAs, amorphous films TiBx(ZrBx) on SiC and n-n+GaAs; SiXC1-X:H, detector diodes Au-TiBx(ZrBx)-n6HSiC, sensor structures, acoustoguided electronics devices, silicon nanoclasters in SiO2-matrix. For the investigations electron-probe and chemical analysis, radiospectroscopy, acoustoelectronic methods and luminescence spectroscopy are used. In the work technique of producing of photosensitive heterostructures on the base of A2B6 and its solid compounds is developed. Optical, electrophysical, and structural properties of electronic equipment (including nanostructured) in the fields of active external factors such as thermal, electrical, magnetic, mechanical and laser and gamma irradiation were studied. Chemical methods of preparing of colloid solution of CdS and CdTe nanocrystals were optimized. On the base of chemical etching por-layers on the substrates of GaAs(111) and GaAs(100) were obtained. Photoluminescence spectra of por-GaAs were studied. Influence of technological regimes of IR light emission diodes production on its technical parameters was found. Experimental samples of noted light emission diodes were prepared. Comparison of these experimental diodes with corresponding commercial models was carried out. Detailed patent research of the questions which examined in the research work was carried out too. The results of the research work can be used in electronic industry due to production of different high quality sensors. Product Description popup.authors Бєляєв О.Є. Бабич В.М. Баранський П.І. Бугай О.А. Венгер Є.Ф. Гасан-заде С.Г. Глинчук К.Д. Казанцева З.І. Калабухова К.М. Козловський С.І. Комащенко В.М. Конакова Р.В. Ліптуга А.І. Матвеєва Л.О. Насєка Ю.М. Прохорович А.В. Сердега Б.К. Стрільчук О.М. Томашик В.М. Фомін О.В. popup.nrat_date 2020-04-02 Close