Search academic texts

Information × Registration Number 0210U005511, 0106U000999 , R & D reports Title Electron proceses in nanoscaled Silicon-On-Insulator structures and devices popup.stage_title Head Lysenko V. S., Registration Date 15-12-2010 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The aim of this work is to investigate charge capture and current transport in MIS-structures HfO2/Si, ZrO2/Si, Gd2O3/Si, SiO2(nanoSi)/Si, in SOI structures and SOI transistors. Methods of research: joint analysis of C (V) and G(f) dependences, measured at low temperatures, thermoactivated current spectroscopy in wide temperature range (4-573K), scanned electron microscopy, high resolution transmitted electron microscopy. Surface state spectra and activation energies of shallow traps of high-K dielectric transition layer have been determined. Role of Si nanoclusters in injection processes had been analyzed, the letter provides a way to suggest the model of non nonvolatile manylevel memory sell. The carrier scattering in channels of SOI transistors, including many-gate FinFETs have been studied minutely. High temperature operation (300°C) model of fully depleted SOI transistor in accumulation mode have been proposed. This model is suitable for both dc and ac regimes of operations Product Description popup.authors Євтух В.А. Гоменюк Ю.В. Гоменюк Ю.Ю. Назаров О.М. Охолін П.М. Руденко Т.О. Степанов В.Г. Турчаніков В.І. Тягульський І.П. popup.nrat_date 2020-04-02 Close