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Information × Registration Number 0210U005749, 0110U004740 , R & D reports Title Development of physico-technological basis for manufacturing of components A3N nanoelectronics devices for optoelectronics and microwave technique popup.stage_title Head Belyaev Alexandr, Доктор фізико-математичних наук Registration Date 05-01-2011 Organization V.Lashkaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 The technology for sapphire nitridization in nitrogen-enriched environment has been developed. Model of the process for nitride layer formation on sapphire by thermo-chemical nitridization is proposed. The process is occurred within several phases. During the first phase the surface layer stoichiometry is breaking followed by nitrogen diffusion inside the sapphire with formation of Al2O3-х: N solid alloy having corundum structure. Within this phase the nucleation occurs followed by formation and growth of oxygen-enriched nitride layer on nitride layer-matrix interface (barrier layer). During the second phase (long-term annealing) the nitride layer thickness is increased with more slow velocity that is limited by oxygen diffusion away the barrier layer. Product Description popup.authors Кладько В.П. Конакова Р.В. Кочелап В.О. Ніжанковський С.В. popup.nrat_date 2020-04-02 Close