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Information × Registration Number 0210U006372, 0107U008524 , R & D reports Title Development of the microelectronic gas sensor based on nanoporous layers for the control of ambient air popup.stage_title Head Litovchenko Volodymir Grygorovych, Registration Date 02-08-2010 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The aim of this work is to develop manufacturing technology microelectronic sensor of hydrogen sulfide based on the nanoporous silicon. The influence of atmospheric humidity on the stability of the parameters of the sensor - the selectivity and sensitivity, at low concentrations in the air. Layout design of portable H2S analyzer based on the MIS structure in the concentration range of 1-1000 ppm of hydrogen sulfide in the air. Methods of research: high-frequency method of capacitance-voltage characteristics (HF C-V), the method of infra-red spectroscopy (IRS), the method of scanning electron microscopy, the method of atomic force microscopy. The results of experimental studies of adsorption and absorption of hydrogen sulfide by the thin films (300 - 500 A) of palladium, copper and composite of copper / palladium and tungsten trioxide / palladium, which are deposited on the surface of the layered structure of the insulator-semiconductor (IS) based on nanoporous silicon. Designed and manufactured model portable gas analyzer H2S based MIS structure in the range of 1-1000 ppm of hydrogen sulfide in the air. Product Description popup.authors Горбанюк Т.І. Солнцев В.С. Чудовська Г.В. popup.nrat_date 2020-04-02 Close