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Information × Registration Number 0210U006952, 0110U006103 , R & D reports Title The development of plasma nanotechnology of the nanostructured aluminium and boron nitrides layers deposition for microwave devices surface protection popup.stage_title Head Zayats Mykola Sergiyovich, Registration Date 12-01-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Within the bounds of the first project stage the equipment for low-temperature plasma chemical vapor deposition of nanostructured BN and AlN layers using magnetron sputtering and chemical vapor deposition was designed and manufactured. The experimental setup was automated and adapted to the technological features of low-temperature plasma chemical vapor deposition of nanostructured layers of BN and AlN. The technological route of SHF silicon active elements manufacturing with using the formation process of aluminum nitride and boron nitride nano-structured layers formation with thickness up to 1,0 microns was designed. Product Description popup.authors А. В. Макаров А. М. Лук'янов В.Б. Лозінський В.Г. Бойко Л.В. Авксєнт'єва М.І. Клюй М.С. Заяць С.М. Заяць popup.nrat_date 2020-04-02 Close