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Information × Registration Number 0210U007780, 0106U000928 , R & D reports Title Nonequilibrium and fluctuating electronic processes in materials and structures of modern micro-, nano- and photo electronics, physico-technological investigations of the growth methods of novel semiconductor materials for infrared and sensor techniques. popup.stage_title Head Korsunska Nadiia Ovsiivna, Registration Date 09-12-2010 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Object of investigations - ZnO and Ge single crystals, Si/SiO2 structures, ZnCdSe/ZnSe, InAs/GaAs, InGaAsNSb/GaAs heterostructures, colloidal quantum dots CdSe, Si-MOS transistors. Goal of investigation - clarification of mechanism of some nonequilibrium and fluctuation processes in the crystals and quantum confinement structures based on A2B6, A3B5 and elemental semiconductors. Methods of investigations are optical, luminescent, electrical, photoelectrical methods, X-ray difractions, electron paramagnetic resonans, Raman scattering, spectroscopy of noise. The mechanism of photoluminescence of stain etched porous silicon as well as mechanism of nanocrystal formation in the layers of Si-SiO2 with hight silicon excess is elucidated. It is found that main shallow donors in ZnO single crystals are the mobile interstitial Zn atoms. The temperature dependencies of luminescence intensity in MBE grown CdSe/InSe heterostructures with quantum dots are theoretically described. Two mechanisms of degradation of luminescence charakteristics of MBE grown InGaAsSbN/GaAs heterostructures with quantum dots are found. The change of diffusion barrier of anion vacancies under capture one or two electrons is calculated. The new method of grows of optical Ge single crystals is developed. The new noise method of investigation of physical mechanisms of influence of lenght and width of FET channel on value of electron mobility is developed. Prediction of development of investigations - improvement of technology of growth of single crystals and epitaxial layers which are used for development of different optoelectronic devices. Product Description popup.authors Бондаренко В.О. Борковська Л.В. Гарбар М.П. Каширіна Н.І. Корсунська Н.О. Кудіна В.І. Кушніренко В.І. Лук'янчикова Н.Б. Маркевич І.В. Осіпьонок М.М. Папуша В.П. Пекар Г.С. Сингаївський О.Ф. Смоланка О.М. Стара Т.Р. Хоменкова Л.Ю. Шульга К.П. Щербина Л.В. popup.nrat_date 2020-04-02 Close