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Information × Registration Number 0210U007874, 0109U006699 , R & D reports Title Electrophysical and electroluminescent properties of nanoscale dielectric layers obtained on the base of the rearearth oxides. popup.stage_title Head Tyagulskiy Stanislav Igorevich, Registration Date 24-12-2010 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 Research object - Si/SiO2 structure of implanted ions Eu and Tb layers of SiO2. Objective - research electrophysical processes occurring in the structures during the injection of charge carriers, as well as excitation and quenching. Research methods - Analysis of electroluminescence spectra and their excitation and quenching, and the study of current-voltage and current-voltage characteristics. Studies have been conducted electroluminescence spectra, the features of excitation and quenching of the main spectral lines during the injection of charge carriers in the structure and analyzed the current-voltage and capacitance-voltage characteristics of structures SiO2, which were implanted to higher doses of ions Tb3, Eu3 and annealed by different methods. Were obtained volt-ampere characteristics of SiO2-Si structures with the oxide, these ions implanted depending on the annealing time. Were analyzed mechanisms of current passage, comparisons of experimental current-voltage characteristics calculated in coordinates FN calculations and obtained values of the potential barrier height and effective mass. Were perfomed the investigations of current-capacity characteristics of structures, which were implanted ions of Eu and Tb and subjected to thermal annealing at different temperatures. The analysis of these characteristics and the conclusions regarding the accumulation of charge in the structure and on its implications on the electroluminescence. The electroluminescence quenching models were presented. Product Description popup.authors Гоменюк Юрій Юрійович Тягульський Станіслав Ігорович popup.nrat_date 2020-04-02 Close