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Information × Registration Number 0211U000046, 0109U005360 , R & D reports Title Development and analysis of new chalcogenic and ionic compounds promising for (opto-) electronic and nuclear technology popup.stage_title Head Davidyuk G., Registration Date 12-01-2011 Organization Lesya Ukrainka Volyn National University popup.description2 The optimum modes of technology of receipt of by a volume monokristal of the hard solutions CuInSe2-ZnIn2Se4 are offered; CuInS2-ZnIn2S4. It is shown on the basis of rentgenostrukturnogo analysis, that alloys crystallize in the low symmetric structural type of halkopirita, the parameters of elementary cell of halkogenidnogo hard solution are set. The explored electric, optical, electric and thermo-electric properties and their dependence on component composition of solution, that allows to forecast the receipt of halkogenidnih hard solutions with the beforehand forecast properties. Electric, optical, photo-electric and thermo-electric properties of by a volume, low symmetric monokristal of the tetrarnih sulfides Cu2CdGeS4, Cu2CdSiS4, Cu2CdSnS4 and AgCd2GaS2 are explored. On the basis of the set features the not contradictory physical model of distributing of the electronic states in the explored semiconductor connections is offered. The found technological methods which allow to decrease the coefficient of absorption of light in area of windows of admission of these crystals, that promotes perspective of the use of the given materials in a nonlinear optics. The got us alloys of the system are explored.%AgGaGeS4 (100-H)they say.% AgGaGe3Se8 and 70mol.%CuCd2InSe4 30mol.% Cu3Cd2InS8. The set machineries of conductivity, window of admission of light, coefficients termo.-e.r.s. and spectral distributing of fotochuvstvitelnosti. The shown possibility of variation by the parameters of alloys changing their component composition. Are explored first got us halkogenidi, alloyed by the ions of the Er3+ stekloobraznih systems Er2Se3-Ga2Se3-GeSe2. The set system of electronic transitions in partly filled 4F - shell of the ion Er3+, what are accountable for the spectral lines of radiation and absorption of light by glass. The opened antistoksovskaya luminescence with a high quantum output in the erbiy capacitive sulfide glasses Ag0,05Ga0.05Ge0.95S2-Er2S3. The last phenomenon has the prospect of the use in the devices of intended for visualization optical images and in the optovolokonnih systems of information transfer. With the purpose of establishment of machineries of rise of radiation firmness of halkogenidnih tetrarnih connections and their alloys influence of large doses of electronic and neutron radiation on the parameters of optical-active centers was explored. The explored characteristic features of education and co-operation of radiation defects with the centers of radiation of light, which can be used for creation radiation of firm materials. Product Description popup.authors Божко Володимир Васильович Давидюк Георгій Євлампійович Мирончук Галина Леонідівна Парасюк Олег Васильович popup.nrat_date 2020-04-02 Close