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Information × Registration Number 0211U000094, 0109U000658 , R & D reports Title Research of new semiconductor nanodevices and nanocomponents of integtated circuits based on quantum one- and two-dimentional structures popup.stage_title Head Timofeyev V.I., Registration Date 14-01-2011 Organization Research Institute of Applied Electronics of Natoinal Technical University of Ukraine "KPI" popup.description2 This work aimed to create an informational basis for simulation of semiconductor nanoscale devices for very-high-speed integrated circuit of giga- and terahertz range and for their production provision with informational basis. The work's subject is physical processes research and physics-topological simulation of nanoscale semiconductor devices: multi-layer hetero-transistor (HEMT) structures including heterobipolar transistors, HEMTs with quantum dots, devices and structures with resonance tunneling for their production technology development and implementation. In this work the possibility is shown to simulate electric properties of trinitride compounds with different crystal lattice modifications in high electric fields; the input data set is proposed to insure the simulation adequateness. Proposed mathematical models, algorithms and programs support a creation of modern semiconductor components for telecommunication systems and signal handling systems, support a nanotechnology progress. Product Description popup.authors Белявський Є.Д. Москалюк В.О. Овчарук М.Г. Семеновська О.В. Фалєєва О.М. Федяй А.В. popup.nrat_date 2020-04-02 Close