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Information × Registration Number 0211U000410, 0109U000579 , R & D reports Title The influence of defects of technological origin on the physical properties of some chalcogenide semiconductors popup.stage_title Head Davidyuk Georgiy E., Registration Date 03-02-2011 Organization Lesya Ukrainka Volyn National University popup.description2 The crystal growth technology of quaternary chalcogenide monocrystalline compounds AgCd2GaS4, AgCd2GaSe4, Ag2CdSnS4 has been developed. The influence of structural defects on the electric, optical, photoelectric properties of single crystals has been studied. The mechanisms of radiation defect formation under irradiation have been investigated. The radiation stability of the crystals has been estimated. The effect of irradiation with fast pile neutrons on the parameters of optically active centres in binary chalcogenides CdS has been studied. The processes of radiation annealing of defects in these crystals have been considered. The results of the work may be used for creation of radiation resistant materials for optoelectronics and nonlinear optics Product Description popup.authors Божко Володимир Васильович Воронюк Сергій Валерійович Касянчук Олександр Сергійович Кевшин Андрій Григорович Шаварова Ганна Петрівна popup.nrat_date 2020-04-02 Close