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Information × Registration Number 0211U000605, 0108U000587 , R & D reports Title Forming of electron-hole transitions in the strain heterosystems with the selforganized defect-deformation clusters popup.stage_title Head Peleshchak Roman Mykhailovych, Доктор фізико-математичних наук Registration Date 11-02-2011 Organization Drohobych Ivan Franko State Pedagogical University popup.description2 The theory of formation of n n+ transitions in three-layer heterosystems with self-assembled defect-deformation structures is constructed. Is shown, that the concentration profile of conduction electrons depends on medial concentration of dot defects. The role of electron-deformation interaction at formation of n n+ transitions in three-layer heterosystems with self-assembled defect-deformation structures is investigated. Is established, that at reduction of medial concentration of conduction electrons in GaAs/InxGa1 xAs/GaAs intense three-layer heterostructure with clusters of interstice defects, n n+ transition becomes sharper. It is caused by the big sensitivity to deformation of a crystal lattice at partial filling of conduction band. Product Description popup.authors Даньків Олеся Омелянівна Крипак Анаталій Олексійович Кузик Олег Васильович Мацько Михайло Іванович Німецький Володимир Петрович Пелещак Роман Михайлович Петрицин Оксана Євгенівна popup.nrat_date 2020-04-02 Close