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Information × Registration Number 0211U001026, 0110U005794 , R & D reports Title "Development of interferential nanolithography methods for formation of relief-phase structures by using of vacuum photoresists" 1 stage-"Optimisation of the vacuum deposition processes of chalcogenide photoresists and investigation of phostimulated changes of their dissolution. Development of high-effective selective etchants" popup.stage_title Head Indutnyi Ivan, Доктор фізико-математичних наук Registration Date 12-01-2011 Organization V.Laskaryov Institute of Semiconductor Physics NAS of Ukraine popup.description2 With the use of computer simulation the deposition of As-S-Se chalcogenides in a vacuum from two vaporizers on revolving substrate have been optimized. The thickness of chalcogenide photoresists, rate of its deposition, and temperature of substrate, are optimized also. It has allowed to obtaine the samples of the plates by size of 50*50 mm with the thickness of photoresist layer from 50 nm to 1 mkm and heterogeneity on a thickness no more than 1%. Investigations of the optical characteristics of chalcogenide photoresists have shown that with increasing of the Se contents in composition of the photoresist layers As40S60-xSex (x=0; 20; 30; 40; 60) the absorption edge is monotonous displaced in the long wave range of the spectrum. . High-selective etchants of negative action (selectivity from 10 to 100) for chalcogenide photoresist layers are developed. As a result of the complex measurements of sensitometric characteristics of resistive layers As40S60-xSex, where х=0; 20; 30; 40; 60, it is shown, that this photoresist is perspective for an interference nanolithography, forming of periodic nanostructure for the various potential applications. Product Description popup.authors Данько Віктор Андрійович Жовмір Сергій Сергійович Минько Віктор Іванович Михайловська Катерина Василівна Сопінський Микола Вікторович Шепелявий Петро Євгенович popup.nrat_date 2020-04-02 Close