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Information × Registration Number 0211U001063, 0110U006275 , R & D reports Title Development of methods for production of THz microwave emission sources based on III V semiconductor structures with nanostructure buffer layers and structured diffusion barriers. popup.stage_title Head Shynkarenko Volodymyr Viktorovich, Registration Date 14-01-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 An analysis of literature was made to choose a contact system to n+ GaN. The technological processes for formation of multilayer contact systems of Ti-Al-Ti-Pd-Au type were developed. The mathematical simulation was performed for active elements with intervalley charge transfer, of the type of n+ - n - n+ GaN-based structure, intended for the 90-110 GHz frequency range. The basic design was developed for chips of active elements, based on the n+ - n - n+ GaN structures, for radiation sources in the 90-110 GHz frequency range. Product Description popup.authors А.В.Саченко В.В.Шинкаренко В.М.Шеремет Кудрик Я.Я. Н.О.Колмакова Р.В.Конакова popup.nrat_date 2020-04-02 Close