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Information × Registration Number 0211U001065, 0110U006276 , R & D reports Title Development of physico-technological foundations of manufacturing nanotechnologies for highly efficient THz Gunn diodes based on indium phosphide epitaxial structures with built-in "elastic" nanoporous buffer layers popup.stage_title Head Konakova Raisa Vasil'evna, Registration Date 14-01-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 An analysis of technical literature on the development of manufacturing technology for contacts to InP-based Gunn diodes was made to choose a contact system to n-InP. The multilayer Au-Ge-TiB2-Au contact system was studied. The optimal composition of contact components as well as optimal mode of thermal treatment was determined. The flow chart for production of mesa based on n - n+ - n++ InP epitaxial structures was developed. Product Description popup.authors А.В.Саченко В.В.Мілєнін В.М.Шеремет Р.В.Конакова С.В.Новицький Я.Я.Кудрик popup.nrat_date 2020-04-02 Close