Search academic texts

Information × Registration Number 0211U001305, 0110U007149 , R & D reports Title The development of the production technologies of the hetero-epitaxial quantum-measure light-emitting-diode structures on InGaN/GaN/Al2O3 basis by the method of the gas phase epitaxy from the metal-organic compositions with the power efficiency more then 60 Lm/Wt. popup.stage_title Head Krukovskii Semen Ivanovich, Registration Date 27-01-2011 Organization The closed Joint-stock Company "Research-and-production concern "Science" popup.description2 A number of experimental investigations have been conducted: investigation of a crystal perfection and composition of AlхGaN1-х/InхGa1-хN/GaN/Al203 heterostructures by high resolution diffractometry; investigation of epitaxial structures dislocation density obtained by gas phase epitaxy from metal-organic compounds; investigation of capacity-voltage and volt-ampere (watt-ampere) characteristics of epitaxial light-emitting diode AlхGaN1-х/InхGa1-хN/GaN/Al203 structures; light-emitting diode AlхGaN1-х/InхGa1-хN/GaN/Al203 structures spectral characteristics investigation; study of the heterostructures exploitation temperature regimes impact on their degradation characteristics; investigation of AlхGaN1-х/InхGa1-хN/GaN/Al203 heterostructures parameters impact on light-emitting diodes degradation. It was detected that current density increase more significant impacts on degradation of crystals based on InGaN/GaN heterostructures because it leads to temperature maldistribution in heterostructures and as a result to the local overheating of its active space. This fact have to be taken into consideration for definition of optimal work regime as by LEDs development as by LED devices designing. The recommendations have been worked out for the heterostructures exploitation temperature regimes to provide optimal degradation characteristics. The scheme of heterostructures construction based on gallium nitride has been developed for radiation wave length blue range. The technologic instruction for light-emitting diode AlхGaN1-х/InхGa1-хN/GaN/Al203 structure fabrication has been updated. Product Description popup.authors Айвазян В.Г. Бобженко С.В. Губіш І.В. Калашнік С.А. Омельяненко М.Ю. Пономаренко А.О. Сидорук Ю.К. Снітко А.М. popup.nrat_date 2020-04-02 Close