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Information × Registration Number 0211U001318, 0106U004182 , R & D reports Title Investigation of radiation effect in semiconductor materials and modern microelectronic devices (silicon, gallium nitride, gallium arsenide). popup.stage_title Head Danilchenko B.A., Registration Date 31-01-2011 Organization Institute of physics NASU popup.description2 The object of research - monocrystalline Si, alloys, Si-Ge, heterostructure AlGaN/GaN, GaAs. Objective: The kinetics of accumulation and annealing of radiation defects with the participation of interstitial atoms C and O in Si and Si-Ge alloys, the nature of radiation hardnes of GaAs heterostructures and the transport properties in ultra-high electric fields in AlGaN/GaN heterostructures. Research methods - IR spectroscopy, Hall effect, photoconductivity, pulsed I-V characteristics, computer simulation of defect formation processes. Investigated formation of radiation defects in silicon CIOI and Si1­xGex . The model of the accumulation of radiation defects in Si under the intensity and irradiation temperature is developed. The nature of degradation of GaAs solar cells under irradiation investigated. The lifetime of the optical LO-phonon in GaN, in its decay to acoustics phonons is deduced. Product Description popup.authors Войтович Василь Васильович Войціховська Олена Олександрівна Данильченко Борис Олександрович Крайчинський Анатолій Миколайович Красько Микола Миколайович Неймаш Володимир Борисович Помозов Юрій Васильович Соснін Михайло Георгійович Трипачко Микола Олександрович Хіруненко Людмила Іванівна Ясковець Іван Іванович popup.nrat_date 2020-04-02 Close