Registration Number
0211U001320,
0106U002965
, R & D reports
Title
Transport and Optical Phenomena in Semiconductor Heterostructures, Nanostructures and alloys.
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Head
Poroshin V.N.,
Registration Date
31-01-2011
Organization
Institute of physics NASU
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In the report results of researches of electric transport of hot carriers, and also radiations and light absorption in far infrared (IR) a range in strong electric fields in heterostructures n-GaAs/InxGa1-xAs/GaAs and p-Si/GexSi1-x/Si with selectively doped quantum wells are presented. The various physical phenomena - a real spatial transfer of carriers between quantum wells, acoustoelectric domains formation, intersubband and inerband light radiation are studied. Results of research of radiation polarisation of hot electrons in far IR a range in heterostructures n-GaAs/InxGa1-xAs/GaAs with quantum wells and in manyvalleys the semiconductor germanium are manifested. The method is developed for reconstruction of three-dimensional distribution of dielectric permeability, which is based on an interference of a basic laser beam of light and a bunch disseminated by object. The received results should be used by working out of semiconductor lasers of a far infrared range, and also semiconductor generators of high frequencies.
Product Description
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Більовський Павло Антонович
Бондар Віталій Михайлович
Вайнберг Віктор Володимирович
Васецький Віктор Михайлович
Винославський Михайло Миколайович
Гуденко Юлія Миколаївна
Пилипчук Олександр Сергійович
Порошин Володимир Миколайович
Сарбей Олег Георгійович
Слуцький Михайло Йосипович
Турчин Олександр Вікторович
Фролова Олена Костянтинівна
Чорноморець Надія Федорівна
Шаховцова Світлана Іванівна
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2020-04-02
