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Information × Registration Number 0211U001322, 0109U001866 , R & D reports Title Design of processing technique of reception functional nanodimensional structures on the basis of synthesis at low temperature silicon cluster of structures and nitrides In and Ga popup.stage_title Head Yakimenko I. Yuri, Registration Date 31-01-2011 Organization Research Institute of Applied Electronics of Natoinal Technical University of Ukraine "KPI" popup.description2 Work is directed on research of structure, physical characteristics and processing techniques of functional substances on the basis of synthesis of films of interconnections of silicon with low temperature. Processes of synthesis of films by a method of high frequency of dispersion are investigated. Thin films of interconnections of silicon with high characteristics are received. They have good stability. In them there are no degradations of effect Steblera-Vronski. The received films of nitrides are characterized high optical sorbtion in the field of 400 nanometers. Heterogeneous junctions have diod characteristics at low values of an electrical pressure 0,01-0,2 In in direct inclusion. The processing technique of management by structural properties of thin films of silicon with inclusions of crystal grains is developed. Electrophysical, optical, thermoelectric, photo-electric and radiating characteristics are investigated. Dependence on the sizes of crystal grains and ratios of amorphous and crystal phases is studied. Product Description popup.authors Іващук Анатолій Васильович Богдан Олександр Володимирович Богдан Тетяна Зіновіївна Душейко Михайло Григорович Зеленський Сергій Васильович Кавраська Наталя Михайлівна Коваль Вікторія Михайлівна Красонтович Михайло Юрійович Лупина Борис Іванович Орлов Анатолій Тимофійович Петрищев Олег Миколайович popup.nrat_date 2020-04-02 Close