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Information × Registration Number 0211U001381, 0108U000635 , R & D reports Title Quantum-well structures bazed on semiconducting materials on ZnSxSe1-x grown by PAVPE metod. popup.stage_title Head Kovalenko Alexandr Vladimirovich, Registration Date 01-02-2011 Organization Dniepropetrovsk national university popup.description2 Object of investigation experimental heteroepitaxial structures and quantum well structures obtained by the photo-assisted gas epitaxy, oxide ceramics. Intention of investigation, development of grown technology of new experimental heteroepitaxial structures with quantum wells by photo-assisted gas epitaxy, creation and study of new oxide-ceramic materials with nonohmic conductivity. Methods of research- analysis of the optical properties of experimental heteroepitaxial structures by luminescence and exciton spectroscopy, optical and electron micrograph, X-ray diffraction analysis, statistical analysis of electrical characteristics, temperature dependences of the capacitance and electric conductivity. By photo-assisted gas epitaxy grown, experimental heteroepitaxial structures in the form of quantum dots and quantum wires. Analysis connection between the technological parameters of synthesis of epitaxial layers and their crystal structure, surface morphology and optical properties shown. The possibility of use as chemical sensors for hydrogen and polycrystalline layers of nanocrystals of ZnSe. Proved that due process of self-organizing quantum dots of ZnSe on GaAs (100) tend to be a bimodal distribution in size. Found that at strong excitation of quantum dots in the structure of the phenomenon of spectral diffusion, and in small-sized ZnSe nanocrystals are formed biexcitons. Justified use as chemical sensors for hydrogen polycrystalline ZnSe and ZnSe quantum wires grown on GaAs (100) substrats. The models of the electrical conductivity of ceramics of the system SnO2-Bi2O3-Co3O4-Nb2O5-Cr2O3 with different content of bismuth oxide in a moist air environment. The ability of the electrical conductivity of oxide-indium ceramics vary from ambient humidity, can be used as a humidity sensor. Potential customers are organizations - developers and manufacturers of electronic devices to protect equipment from overload current, voltage and chemical sensors. The results can be used to develop new and improve existing ceramic sensors and non-linear elements to create new micro and optoelectronics. The results obtained correspond to international standards. Accuracy, precision and accuracy of research ensures reusable verification and repeatability. Product Description popup.authors Гапонов Олексій Володимирович Дягтерьов Артем Васильович Мазурик Станіслав Васильович popup.nrat_date 2020-04-02 Close
R & D report
Head: Kovalenko Alexandr Vladimirovich. Quantum-well structures bazed on semiconducting materials on ZnSxSe1-x grown by PAVPE metod.. (popup.stage: ). Dniepropetrovsk national university. № 0211U001381
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