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Information × Registration Number 0211U001537, 0110U004739 , R & D reports Title Development of technology and research of amplification and generation of sub-terahertz and teraherts radiation using nanosize semiconductor structures based on nitrides of III group popup.stage_title Head Kochelap V A, Registration Date 10-02-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The results of technology development and research on generation of sub-terahertz and terahertz radiation using nanoscale semiconductor structures based on group III nitride compounds are presented. The theory of charge transfer in nanosize GaN diodes in steady-state and high-frequency modes is built. The quantum transport of hot electrons and phonons is studied for a super high (up to 200 kV.cm) short-pulsed (10 ns) electric fields in a wide range of temperatures from 4 to 300 K. The record drift velocities of charge carriers (up to 2.10^7 sm.s) were obtained. Product Description popup.authors Бєляєв О.Є. Данільченко Б.О. popup.nrat_date 2020-04-02 Close
R & D report
Development of technology and research of amplification and generation of sub-terahertz and teraherts radiation using nanosize semiconductor structures based on nitrides of III group
Head: Kochelap V A. Development of technology and research of amplification and generation of sub-terahertz and teraherts radiation using nanosize semiconductor structures based on nitrides of III group. (popup.stage: ). Institute of Semiconductor Physics of National Academy of Sciences of Ukrain. № 0211U001537
1 documents found

Updated: 2026-03-26


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