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Information × Registration Number 0211U001596, 0110U006337 , R & D reports Title Development of technology of nano-scale structures with germanium films and their alloys with Si and GaAs on substrates made of GaAs and Si for manufacturing on their basis of electronics devices. popup.stage_title Head Venger Evgeni Fedorovych, Registration Date 14-02-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 The object of R&D is the nano-scale films of Ge on GaAs. The aim of the work is preparation and investigations of the nano-scale films of Ge on GaAs and development of new electronic devices on their base. Methods of research are: atom-force microscopy, scanning Kelvin probe microscopy, high resolution transmission electron microscopy (HRTEM), as well as conductivity and Hall effect. The report contains information about the preparation technology of the nano-scale films of Ge on GaAs with using a vacuum technique, the experimental results on film surface and heteroboundary morphology study, the kinetic phenomena and charge carriers scattering investigation by using the Hall effect and conductivity. The results of the pilot design of p-i-n heterodiode (Gep+/i-Ge/GaAsn/GaAsn+) with embedded the nano-scale i-layer and its current-voltage characteristics are considered in the report as well. Product Description popup.authors Венгер Євген Федорович Кулик Олена Сергіївна Мітін Вадим федорович Матвеева Людмила Олександрівна Неміш Іван Юрійович Холевчук Володимир Васильович popup.nrat_date 2020-04-02 Close