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Information × Registration Number 0211U002296, 0109U005927 , R & D reports Title Nanosize Clustering in AlInGaN Epitaxial Layers and Heterostructures for Light Emitting Devices and Photoelectric Converters popup.stage_title Head Strelchuk Viktor Vasylyovych, Доктор фізико-математичних наук Registration Date 01-02-2011 Organization Institute of Semiconductor Physics of National Academy of Sciences of Ukrain popup.description2 High-resolution X-ray diffraction and Scanning confocal Raman spectroscopy was applied to study spatial distribution of deformations and structural perfection of InxGa1-xN/GaN layers in multilayer light-emitting diode (LED) structures obtained by hybrid metal-organic chemical vapor deposition (MOCVD) on (0001)-oriented sapphire substrates. It was shown that elastic strains practically almost relax on the heteroboundary between thick GaN buffer layer and InхGa1-хN/GaN buffer superlattice (SL). It was established that GaN and SL layers are in a tensile strain state when the solid solution is in compression state. The values of tensile strains in GaN layers are less than the values of compression strains in InGaN layers. It was also figured out that SL layer are less dislocation as compared to buffer layers with chaotic distribution of dislocations. Investigation of micro-Raman depth scanning of the multilayer structure allowed obtaining direct evidence of the asymmetric gradient profile of strain distribution and crystal perfection of epitaxial nitride layers along their growth direction. It was also shown that emission intensity of InуGa1-уN QWs considerably exceeds (more than 30 times) the corresponding emission of GaN barrier layers which indicates high efficiency of charge carriers' capture in quantum well. Product Description popup.authors Брикса Вадим Петрович Коломис Олександр Федорович Корбутяк Дмитро Васильович Крюченко Юрій Васильович Ніколенко Андрій Сергійович popup.nrat_date 2020-04-02 Close